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Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics
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Copyright Title

Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics

Status

Published

on 15 Jun 2007
Year of Creation
2004
Copyright Claimant
Yong Gao
Registration Number
TX0006130397
on 15 Jun 2007

Copyright Summary


The U.S. Copyright record (Registration Number: TX0006130397) dated 15 Jun 2007, pertains to an electronic file (eService) titled "Deposition, stabilization and characterization of zirconium oxide and hafnium oxide thin films for high k gate dielectrics" created in 2004. The copyright holder is Yong Gao, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Yong Gao.

Copyright Details


Copyright Claimant
Yong Gao

Application Details


Registration Number
TX0006130397
Registration Date
6/15/2007
Year of Creation
2004
Agency Marc Code
DLC-CO
Record Status
Changed
Physical Description
Computer text data

Personal Authors


Notes


Rights Note: Rights and permissions info. on CORDS appl. in CO
Local Copyright Note: Electronic registration

Statements


Author Statement: entire text: Yong Gao
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