Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications

Text Registration

Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications

Status

Published

on 27 Apr 2018

Year of Creation

2017

Wenwen Li

Registration Number

TX0008594079

on 27 Apr 2018

The U.S. Copyright record (Registration Number: TX0008594079) dated 27 Apr 2018, pertains to an electronic file (eService) titled "Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications" created in 2017. The copyright holder is Wenwen Li, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Wenwen Li.

Wenwen Li

Application Details

Registration Number

TX0008594079

Registration Date

4/27/2018

Year of Creation

2017

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

Personal Authors

Wenwen Li

Notes

Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications

Author Statement: Wenwen Li Citizenship: not known Authorship: text

Notes

Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Design and Fabrication of Vertical GaN Transistors for High-Power and High-Frequency Applications

Author Statement: Wenwen Li Citizenship: not known Authorship: text

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