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Visit USCOFabrication and Characterization of Thin Film Transistors based on Sol-Gel Derived Zinc Oxide Channel Layers
Text Registration
Copyright Title
Fabrication and Characterization of Thin Film Transistors based on Sol-Gel Derived Zinc Oxide Channel Layers
Status
Unpublished
on 5 Jun 2018
Year of Creation
2018
Copyright Claimant
Vahid Mirkhani
Registration Number
TXu002101163
on 5 Jun 2018Copyright Summary
The U.S. Copyright record (Registration Number: TXu002101163) dated 5 Jun 2018, pertains to an electronic file (eService) titled "Fabrication and Characterization of Thin Film Transistors based on Sol-Gel Derived Zinc Oxide Channel Layers" created in 2018. The copyright holder is Vahid Mirkhani, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Vahid Mirkhani.
Application Details
Registration Number
TXu002101163
Registration Date
6/5/2018
Year of Creation
2018
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Electronic file (eService)
Statements
Application Title Statement: Fabrication and Characterization of Thin Film Transistors based on Sol-Gel Derived Zinc Oxide Channel Layers
Author Statement: Vahid Mirkhani Citizenship: Iran Authorship: text
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