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Visit USCOPhysics and modeling of dopant diffusion in ion-implanted silicon during rapid thermal annealing of shallow junction Tzu-hsin Huang
Text Registration
Copyright Title
Physics and modeling of dopant diffusion in ion-implanted silicon during rapid thermal annealing of shallow junction Tzu-hsin Huang
Status
Published
on 14 Jun 2007
Year of Creation
1994
Copyright Claimant
Tzu-hsin Huang, 1966
Registration Number
TX0004152788
on 14 Jun 2007Copyright Summary
The U.S. Copyright record (Registration Number: TX0004152788) dated 14 Jun 2007, pertains to an electronic file (eService) titled "Physics and modeling of dopant diffusion in ion-implanted silicon during rapid thermal annealing of shallow junction Tzu-hsin Huang" created in 1994. The copyright holder is Tzu-hsin Huang, 1966, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Tzu-hsin Huang, 1966.
Application Details
Registration Number
TX0004152788
Registration Date
6/14/2007
Year of Creation
1994
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Microfiche
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