Text Registration
Copyright Title
Nano-CMOS Gate Dielectric Engineering
Status
Published
on 12 Apr 2012
Year of Creation
2011
Copyright Claimant
Taylor and Francis
Registration Number
TX0007518592
on 12 Apr 2012Copyright Summary
The U.S. Copyright record (Registration Number: TX0007518592) dated 12 Apr 2012, pertains to an electronic file (eService) titled "Nano-CMOS Gate Dielectric Engineering" created in 2011. The copyright holder is Taylor and Francis, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Taylor and Francis.
Application Details
Registration Number
TX0007518592
Registration Date
4/12/2012
Year of Creation
2011
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Book, 234 p
First Publication Nation
United States
ISBN
9781439849590
Statements
Application Title Statement: Nano-CMOS Gate Dielectric Engineering
Author Statement: Hei Wong Domicile: Hong Kong Authorship: text, compilation, editing
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