Gallium nitride-based and high-speed metal-semiconductor-metal photodetector growth and device structures for integration

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Gallium nitride-based and high-speed metal-semiconductor-metal photodetector growth and device structures for integration

Status

Published

on 15 Jun 2007

Year of Creation

2003

Sa Huang

Registration Number

TX0006047887

on 15 Jun 2007

The U.S. Copyright record (Registration Number: TX0006047887) dated 15 Jun 2007, pertains to an electronic file (eService) titled "Gallium nitride-based and high-speed metal-semiconductor-metal photodetector growth and device structures for integration" created in 2003. The copyright holder is Sa Huang, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Sa Huang.

Sa Huang

Application Details

Registration Number

TX0006047887

Registration Date

6/15/2007

Year of Creation

2003

Agency Marc Code

DLC-CO

Record Status

Changed

Physical Description

Computer text data

Personal Authors

Sa Huang

Notes

Rights Note: Rights and permissions info. on CORDS appl. in CO

Local Copyright Note: Electronic registration

Statements

Author Statement: entire text: Sa Huang

Notes

Rights Note: Rights and permissions info. on CORDS appl. in CO

Local Copyright Note: Electronic registration

Statements

Author Statement: entire text: Sa Huang

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