Selective area chemical vapor deposition of epitaxial Si(1-x)Ge(x) thin films by the alternating cyclic method

Text Registration

Selective area chemical vapor deposition of epitaxial Si(1-x)Ge(x) thin films by the alternating cyclic method

Status

Published

on 14 Jun 2007

Year of Creation

1999

Ravindra Govind Soman

Registration Number

TX0005024998

on 14 Jun 2007

The U.S. Copyright record (Registration Number: TX0005024998) dated 14 Jun 2007, pertains to an electronic file (eService) titled "Selective area chemical vapor deposition of epitaxial Si(1-x)Ge(x) thin films by the alternating cyclic method" created in 1999. The copyright holder is Ravindra Govind Soman, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Ravindra Govind Soman.

Ravindra Govind Soman

Application Details

Registration Number

TX0005024998

Registration Date

6/14/2007

Year of Creation

1999

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Computer text data

Personal Authors

Ravindra Govind Soman

Notes

Rights Note: Rights and permissions info. on CORDS appl. in CO

Bibliographic Note: Electronic registration

Statements

Author Statement: entire text: Ravindra Govind Soman

Notes

Rights Note: Rights and permissions info. on CORDS appl. in CO

Bibliographic Note: Electronic registration

Statements

Author Statement: entire text: Ravindra Govind Soman

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