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MOCVD growth and characterization of heterostructures for HBT's and light-emitting devices in indium gallium arsenide/indium aluminum arsenide/indium phosphide and indium gallium phosphide/indium
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Copyright Title

MOCVD growth and characterization of heterostructures for HBT's and light-emitting devices in indium gallium arsenide/indium aluminum arsenide/indium phosphide and indium gallium phosphide/indium

Status

Published

on 14 Jun 2007
Year of Creation
1996
Copyright Claimant
Ramachandran V. Chelakara
Registration Number
TX0004393609
on 14 Jun 2007

Copyright Summary


The U.S. Copyright record (Registration Number: TX0004393609) dated 14 Jun 2007, pertains to an electronic file (eService) titled "MOCVD growth and characterization of heterostructures for HBT's and light-emitting devices in indium gallium arsenide/indium aluminum arsenide/indium phosphide and indium gallium phosphide/indium" created in 1996. The copyright holder is Ramachandran V. Chelakara, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Ramachandran V. Chelakara.

Copyright Details


Copyright Claimant
Ramachandran V. Chelakara

Application Details


Registration Number
TX0004393609
Registration Date
6/14/2007
Year of Creation
1996
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Microfiche

Statements


Application Title Statement: tx4393609
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