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Development of wide-band gap indium gallium nitride solar cells for high-efficiency photovoltaics
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Copyright Title

Development of wide-band gap indium gallium nitride solar cells for high-efficiency photovoltaics

Status

Published

on 1 Jul 2010
Year of Creation
2008
Copyright Claimant
Omkar K. Jani
Registration Number
TX0006691219
on 1 Jul 2010

Copyright Summary


The U.S. Copyright record (Registration Number: TX0006691219) dated 1 Jul 2010, pertains to an electronic file (eService) titled "Development of wide-band gap indium gallium nitride solar cells for high-efficiency photovoltaics" created in 2008. The copyright holder is Omkar K. Jani, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Omkar K. Jani.

Copyright Details


Copyright Claimant
Omkar K. Jani

Application Details


Registration Number
TX0006691219
Registration Date
7/1/2010
Year of Creation
2008
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Computer text data

Personal Authors


Notes


Rights Note: Rights and permissions info. on CORDS appl. in CO
Local Copyright Note: Electronic registration

Statements


Author Statement: entire text: Omkar K. Jani
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