Highly Stretchable Field-Effect Transistors and Design Rules for Photovoltaics by Semiconducting Single-Walled Carbon Nanotubes

Text Registration

Highly Stretchable Field-Effect Transistors and Design Rules for Photovoltaics by Semiconducting Single-Walled Carbon Nanotubes

Status

Published

on 19 Mar 2021

Year of Creation

2017

Meng-Yin Wu

Registration Number

TX0008956766

on 19 Mar 2021

The U.S. Copyright record (Registration Number: TX0008956766) dated 19 Mar 2021, pertains to an electronic file (eService) titled "Highly Stretchable Field-Effect Transistors and Design Rules for Photovoltaics by Semiconducting Single-Walled Carbon Nanotubes" created in 2017. The copyright holder is Meng-Yin Wu, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Meng-Yin Wu.

Meng-Yin Wu

Application Details

Registration Number

TX0008956766

Registration Date

3/19/2021

Year of Creation

2017

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

ISBN

9798662424654

Personal Authors

Meng-Yin Wu

Statements

Application Title Statement: Highly Stretchable Field-Effect Transistors and Design Rules for Photovoltaics by Semiconducting Single-Walled Carbon Nanotubes

Author Statement: Meng-Yin Wu Domicile: United States Citizenship: United States Authorship: text

Statements

Application Title Statement: Highly Stretchable Field-Effect Transistors and Design Rules for Photovoltaics by Semiconducting Single-Walled Carbon Nanotubes

Author Statement: Meng-Yin Wu Domicile: United States Citizenship: United States Authorship: text

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