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Visit USCOGrowth of InGaN Material and Device Structures in a High Pressure MOCVD Reactor
Text Registration
Copyright Title
Growth of InGaN Material and Device Structures in a High Pressure MOCVD Reactor
Status
Published
on 17 Jun 2019
Year of Creation
2019
Copyright Claimant
Matthew D Conway
Registration Number
TX0008758036
on 17 Jun 2019Copyright Summary
The U.S. Copyright record (Registration Number: TX0008758036) dated 17 Jun 2019, pertains to an electronic file (eService) titled "Growth of InGaN Material and Device Structures in a High Pressure MOCVD Reactor" created in 2019. The copyright holder is Matthew D Conway, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Matthew D Conway.
Application Details
Registration Number
TX0008758036
Registration Date
6/17/2019
Year of Creation
2019
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Electronic file (eService)
First Publication Nation
United States
Notes
Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com
Statements
Application Title Statement: Growth of InGaN Material and Device Structures in a High Pressure MOCVD Reactor
Author Statement: Matthew David Conway Citizenship: not known Authorship: text
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