2007

Aluminum antimonide/gallium antimonide/indium arsenide based heterojunction field effect transistors

Visit USCO

Text Registration

Aluminum antimonide/gallium antimonide/indium arsenide based heterojunction field effect transistors

Status

Published

on 14 Jun 2007

Year of Creation

1991

Lifan Luo, 1961

Registration Number

TX0003371015

on 14 Jun 2007

The U.S. Copyright record (Registration Number: TX0003371015) dated 14 Jun 2007, pertains to an electronic file (eService) titled "Aluminum antimonide/gallium antimonide/indium arsenide based heterojunction field effect transistors" created in 1991. The copyright holder is Lifan Luo, 1961, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Lifan Luo, 1961.

Lifan Luo, 1961

Application Details

Registration Number

TX0003371015

Registration Date

6/14/2007

Year of Creation

1991

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

microfiche

Personal Authors

Lifan Luo

Get your copyright registered todayThousands have copyrighted their assets.
What are you waiting for?

Show terms & conditions

Disclaimer: The information contained in this website is provided for informational purposes only, and should not be construed as legal advice. Although LegalForce RAPC Worldwide P.C., dba Trademarkia P.C., is a law firm (the “Firm”), your use of this website does not establish an attorney-client relationship with the Firm. Such a relationship can only be established after the Firm decides that it is willing and able to accept the engagement after a conflict check and after a written retainer agreement is agreed upon between you and the Firm. Your use of this website is also subject to our Terms of Use and Privacy Policy. ** The entry level subscription is a bundled price which requires a minimum of two billing cycles, or 6 months.