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Visit USCOGrowth of III-nitrides by molecular beam epitaxy for heterojunction field effect transistors and optoelectronic applications
Text Registration
Copyright Title
Growth of III-nitrides by molecular beam epitaxy for heterojunction field effect transistors and optoelectronic applications
Status
Published
on 15 Jun 2007
Year of Creation
2004
Copyright Claimant
Jeonghyun Hwang
Registration Number
TX0005935107
on 15 Jun 2007Copyright Summary
The U.S. Copyright record (Registration Number: TX0005935107) dated 15 Jun 2007, pertains to an electronic file (eService) titled "Growth of III-nitrides by molecular beam epitaxy for heterojunction field effect transistors and optoelectronic applications" created in 2004. The copyright holder is Jeonghyun Hwang, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Jeonghyun Hwang.
Application Details
Registration Number
TX0005935107
Registration Date
6/15/2007
Year of Creation
2004
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Computer text data
Notes
Rights Note: Rights and permissions info. on CORDS appl. in CO
Bibliographic Note: Electronic registration
Statements
Author Statement: entire text: Jeonghyun Hwang
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