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Visit USCOA procedure for measuring P-channel MOSFET hot-carrier-induced degradation under DC stress
Text Registration
Copyright Title
A procedure for measuring P-channel MOSFET hot-carrier-induced degradation under DC stress
Status
Published
on 15 Jun 2007
Year of Creation
2004
Copyright Claimant
JEDEC
Registration Number
TX0006210682
on 15 Jun 2007Copyright Summary
The U.S. Copyright record (Registration Number: TX0006210682) dated 15 Jun 2007, pertains to an electronic file (eService) titled "A procedure for measuring P-channel MOSFET hot-carrier-induced degradation under DC stress" created in 2004. The copyright holder is JEDEC, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to JEDEC.
Application Details
Registration Number
TX0006210682
Registration Date
6/15/2007
Year of Creation
2004
Agency Marc Code
DLC-CO
Record Status
Changed
Corporate Author
JEDEC
Notes
Local Copyright Note: Cataloged from appl. only
Material Matter Claimed Note: New Matter: revisions
Previous Registration Note: Prev. reg. 1999, TX 4-993-413
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