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Gallium Nitride Nanostructured Power Semiconductor Devices
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Copyright Title

Gallium Nitride Nanostructured Power Semiconductor Devices

Status

Published

on 7 Jul 2017
Year of Creation
2017
Copyright Claimant
Gourab Sabui
Registration Number
TX0008473313
on 7 Jul 2017

Copyright Summary


The U.S. Copyright record (Registration Number: TX0008473313) dated 7 Jul 2017, pertains to an electronic file (eService) titled "Gallium Nitride Nanostructured Power Semiconductor Devices" created in 2017. The copyright holder is Gourab Sabui, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Gourab Sabui.

Copyright Details


Copyright Claimant
Gourab Sabui

Application Details


Registration Number
TX0008473313
Registration Date
7/7/2017
Year of Creation
2017
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Electronic file (eService)
First Publication Nation
United States

Personal Authors


Notes


Rights Note: Mark Dill, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements


Application Title Statement: Gallium Nitride Nanostructured Power Semiconductor Devices
Author Statement: Gourab Sabui Citizenship: United States Authorship: text
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