Charge Trap Transistors (CTT): Turning Logic Transistors into Embedded Non-Volatile Memory for Advanced High-k/Metal Gate CMOS Technologies

Text Registration

Charge Trap Transistors (CTT): Turning Logic Transistors into Embedded Non-Volatile Memory for Advanced High-k/Metal Gate CMOS Technologies

Status

Published

on 5 May 2020

Year of Creation

2020

Faraz Khan

Registration Number

TX0008872780

on 5 May 2020

The U.S. Copyright record (Registration Number: TX0008872780) dated 5 May 2020, pertains to an electronic file (eService) titled "Charge Trap Transistors (CTT): Turning Logic Transistors into Embedded Non-Volatile Memory for Advanced High-k/Metal Gate CMOS Technologies" created in 2020. The copyright holder is Faraz Khan, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Faraz Khan.

Faraz Khan

Application Details

Registration Number

TX0008872780

Registration Date

5/5/2020

Year of Creation

2020

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

Personal Authors

Faraz Khan

Notes

Rights Note: Mark Dill, ProQuest, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Charge Trap Transistors (CTT): Turning Logic Transistors into Embedded Non-Volatile Memory for Advanced High-k/Metal Gate CMOS Technologies

Author Statement: Faraz Khan Citizenship: not known Authorship: text

Notes

Rights Note: Mark Dill, ProQuest, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600, disspub@proquest.com

Statements

Application Title Statement: Charge Trap Transistors (CTT): Turning Logic Transistors into Embedded Non-Volatile Memory for Advanced High-k/Metal Gate CMOS Technologies

Author Statement: Faraz Khan Citizenship: not known Authorship: text

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