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Visit USCORare Earth and Transition Metal Doping of Semiconductor Materials : Synthesis, Magnetic Properties and Room Temperature Spintronics, First Edition
Text Registration
Copyright Title
Rare Earth and Transition Metal Doping of Semiconductor Materials : Synthesis, Magnetic Properties and Room Temperature Spintronics, First Edition
Status
Published
on 21 Feb 2017
Year of Creation
2016
Copyright Claimant
Elsevier Inc
Registration Number
TX0008320657
on 21 Feb 2017Copyright Summary
The U.S. Copyright record (Registration Number: TX0008320657) dated 21 Feb 2017, pertains to an electronic file (eService) titled "Rare Earth and Transition Metal Doping of Semiconductor Materials : Synthesis, Magnetic Properties and Room Temperature Spintronics, First Edition" created in 2016. The copyright holder is Elsevier Inc, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Elsevier Inc.
Application Details
Registration Number
TX0008320657
Registration Date
2/21/2017
Year of Creation
2016
Agency Marc Code
DLC-CO
Record Status
Changed
Physical Description
Book, 454 p
First Publication Nation
United States
ISBN
9780081000410
Preexisting Material
permissioned materials
Notes
Rights Note: permissions@elsevier.com
Local Copyright Note: C.O. correspondence
Material Matter Claimed Note: some text, compilation of articles
Statements
Application Title Statement: Rare Earth and Transition Metal Doping of Semiconductor Materials, First Edition
Author Statement: Volkmar Dierolf Citizenship: Germany Authorship: some text, compilation of articles Ian Ferguson Citizenship: United States Authorship: some text, compilation of articles John Zavada Citizenship: United States Authorship: some text, compilation of articles
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