Design and fabrication of a monolithically integrated thermal self-protection circuit with a high voltage GaN-on-Si power HEMT

Text Registration

Design and fabrication of a monolithically integrated thermal self-protection circuit with a high voltage GaN-on-Si power HEMT

Status

Published

on 1 Nov 2016

Year of Creation

2016

Dilip M. Risbud

Registration Number

TX0008285569

on 1 Nov 2016

The U.S. Copyright record (Registration Number: TX0008285569) dated 1 Nov 2016, pertains to an electronic file (eService) titled "Design and fabrication of a monolithically integrated thermal self-protection circuit with a high voltage GaN-on-Si power HEMT" created in 2016. The copyright holder is Dilip M. Risbud, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Dilip M. Risbud.

Dilip M. Risbud

Application Details

Registration Number

TX0008285569

Registration Date

11/1/2016

Year of Creation

2016

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

Personal Authors

Dilip M Risbud

Notes

Rights Note: Diana G Zajic, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600 xext77020, disspub@proquest.com

Statements

Application Title Statement: Design and fabrication of a monolithically integrated thermal self-protection circuit with a high voltage GaN-on-Si power HEMT

Author Statement: Dilip M. Risbud Citizenship: United States Authorship: text

Notes

Rights Note: Diana G Zajic, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600 xext77020, disspub@proquest.com

Statements

Application Title Statement: Design and fabrication of a monolithically integrated thermal self-protection circuit with a high voltage GaN-on-Si power HEMT

Author Statement: Dilip M. Risbud Citizenship: United States Authorship: text

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