Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes

Text Registration

Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes

Status

Published

on 22 Dec 2014

Year of Creation

2014

Dhiraj P. Sinha

Registration Number

TX0008059778

on 22 Dec 2014

The U.S. Copyright record (Registration Number: TX0008059778) dated 22 Dec 2014, pertains to an electronic file (eService) titled "Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes" created in 2014. The copyright holder is Dhiraj P. Sinha, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Dhiraj P. Sinha.

Dhiraj P. Sinha

Application Details

Registration Number

TX0008059778

Registration Date

12/22/2014

Year of Creation

2014

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

Personal Authors

Dhiraj P Sinha

Notes

Rights Note: Diana G Zajic, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600 x7020, disspub@email.com

Statements

Application Title Statement: Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes

Author Statement: Dhiraj P. Sinha Citizenship: not known Authorship: text

Notes

Rights Note: Diana G Zajic, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600 x7020, disspub@email.com

Statements

Application Title Statement: Fundamental Studies of Supported Graphene Interfaces: Defect Density of States in Graphene Field Effect Transistors (FETs) and Ideal Graphene - Silicon Schottky Diodes

Author Statement: Dhiraj P. Sinha Citizenship: not known Authorship: text

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