Nanoscale Manipulation of GaN for Next Generation Devices via Electrochemical Etch

Text Registration

Nanoscale Manipulation of GaN for Next Generation Devices via Electrochemical Etch

Status

Published

on 30 Aug 2016

Year of Creation

2016

Danti Chen

Registration Number

TX0008268742

on 30 Aug 2016

The U.S. Copyright record (Registration Number: TX0008268742) dated 30 Aug 2016, pertains to an electronic file (eService) titled "Nanoscale Manipulation of GaN for Next Generation Devices via Electrochemical Etch" created in 2016. The copyright holder is Danti Chen, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Danti Chen.

Danti Chen

Application Details

Registration Number

TX0008268742

Registration Date

8/30/2016

Year of Creation

2016

Agency Marc Code

DLC-CO

Record Status

New

Physical Description

Electronic file (eService)

First Publication Nation

United States

Personal Authors

Danti Chen

Notes

Rights Note: Diana G Zajic, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600 xext77020, disspub@proquest.com

Statements

Application Title Statement: Nanoscale Manipulation of GaN for Next Generation Devices via Electrochemical Etch

Author Statement: Danti Chen Citizenship: China Authorship: text

Notes

Rights Note: Diana G Zajic, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600 xext77020, disspub@proquest.com

Statements

Application Title Statement: Nanoscale Manipulation of GaN for Next Generation Devices via Electrochemical Etch

Author Statement: Danti Chen Citizenship: China Authorship: text

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