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Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer
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Copyright Title

Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer

Status

Published

on 11 Apr 2017
Year of Creation
2017
Copyright Claimant
Babar Hussain
Registration Number
TX0008455136
on 11 Apr 2017

Copyright Summary


The U.S. Copyright record (Registration Number: TX0008455136) dated 11 Apr 2017, pertains to an electronic file (eService) titled "Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer" created in 2017. The copyright holder is Babar Hussain, known for their creative contributions in text registration. For any inquiries concerning this copyrighted material, kindly reach out to Babar Hussain.

Copyright Details


Copyright Claimant
Babar Hussain

Application Details


Registration Number
TX0008455136
Registration Date
4/11/2017
Year of Creation
2017
Agency Marc Code
DLC-CO
Record Status
New
Physical Description
Electronic file (eService)
First Publication Nation
United States

Personal Authors


Notes


Rights Note: Diana G Zajic, ProQuest-CSA, LLC, 789 E. Eisenhower Parkway, Ann Arbor, MI, 48108-3218, United States, (800) 521-0600 xext77020, disspub@proquest.com

Statements


Application Title Statement: Development of n-ZnO/p-Si single heterojunction solar cell with and without interfacial layer
Author Statement: Babar Hussain Citizenship: United States Authorship: text
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